Analysis of the mechanisms by which sputtered AlN nucleation layers enhance the performance of red InGaN-based LEDs

This work proposed to modulate the strain of underlying GaN layers using different thicknesses of sputtered AlN nucleation layer to achieve long-wavelength red InGaN mini-light-emitting diodes (mini-LEDs). The increase in thickness of sputtered AlN from 15 nm to 60 nm could reduce the compressive strain in epitaxial GaN layers, which led to a shift in the peak wavelength of InGaN LEDs ranging from 633 nm to 656 nm at 1 A/cm