Water-Writing Pattern on PEDOT:PSS Inverse Opal Films through the Synergistic Effect of Morphology/Conformation Transition

材料科学 形态学(生物学) 佩多:嘘 化学工程 纳米技术 反向 图层(电子) 几何学 数学 遗传学 生物 工程类
作者
Pingping Wu,Qilin Guo,Jun‐Chao Liu,Jingxia Wang
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:16 (30): 39876-39885
标识
DOI:10.1021/acsami.4c08230
摘要

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has received tremendous attention in the energy field owing to its high conductivity, ease of processing, biocompatibility, and low cost-effectiveness. Combining PEDOT:PSS and photonic crystals (PCs) is expected to promote the development of high-performance optoelectronic devices. The conductivity of PEDOT:PSS at present can only be measured through specific equipment, and the visualization of optoelectronic integration still remains a challenge. In this study, various patterned PEDOT:PSS inverse opal (PEDOT:PSS-IO) films are constructed by associating the conductivity of PEDOT:PSS with the structural color of PCs based on the synergistic effect of morphology/conformation transition, which achieves the visualization of optoelectronic integration. Morphology transition of the PEDOT:PSS-IO film alters from the interconnected to gradual closure pore structure, accompanied by an unusual blueshift of the stopband, which can be attributed to the collapse/reconstruction of the frame of the PEDOT:PSS-IO film. Conformation transition of PEDOT chains converts from the benzene to quinone structure, accompanying an enhancement of conductivity, which resulted from PSS removal and secondary doping. Under the induction of a polar solvent, the PEDOT:PSS-IO film brings the changes in optical/electrical dual-signals based on the synergistic effect of morphology/conformation transition. This phenomenon can be developed for the creation of a conductive PC pattern by using a polar solvent (water) as an ink, which is beneficial for the visualization of optoelectronic integration. This work provides essential significance for the fabrication of functional optoelectronic devices.
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