异质结
方案(数学)
等离子体子
理论(学习稳定性)
材料科学
凝聚态物理
纳米技术
光电子学
物理
计算机科学
数学
数学分析
机器学习
作者
Mope Edwin Malefane,Joyce Tsepiso Khutlane,Muthumuni Managa,Cornelia Gertina Catharina Elizabeth van Sittert,Thabo T.I. Nkambule,Alex T. Kuvarega
标识
DOI:10.1007/s42114-024-01014-1
摘要
Abstract The investigation and understanding of heterointerfaces formation and charge transfer dynamics in two or more semiconductor heterojunctions increased ensuing establishment of S-scheme and dual S-scheme heterojunctions. However, investigations of possible charge transfer at interfaces and their type in four component systems are limited. Herein, a four-component heterojunction was investigated to postulate and demonstrate deviation between quadruple and triple S-scheme heterojunctions possibilities using LaNiO 3 , BiOBr, CuBi 2 O 4 , and Bi 2 WO 6 . DFT and XPS were used to construct the band structure and support the charge transfer at the interfaces to follow S-S strategy during OTC and SMX degradation under visible light. IEF, bend bending systematically modulated charge transfer, and the core-shell strategy restricted possible junctions’ formation to three to accord triple S-scheme heterojunction. This work demonstrated the construction of Triple S-scheme heterostructures as a promising strategy for efficient charge separation making it a suitable candidate for elimination of pollutants.
科研通智能强力驱动
Strongly Powered by AbleSci AI