Multifunctional terahertz absorber based on the Dirac semimetal and vanadium dioxide

In this paper, a multifunctional terahertz (THz) absorber based on Dirac semimetal and vanadium dioxide (VO2) is proposed. By modulating the temperature of VO2, the absorber can be switched between the narrow band and wide band. When VO2 is in the metallic state, the absorber has a broadband absorption effect with a bandwidth of approximately 4 THz. It has the advantages of insensitivity to polarization and wide-angle absorption. When VO2 is in the insulating state, the absorber has two absorption peaks with absorptivity exceeding 90% and sensitivities of 297.7 and 402 GHz/RIU, and thus can be used as a highly sensitive sensor for cell detection. When the Fermi level of the Dirac semimetal is changed, the absorption characteristics can be modulated. The absorber has broad application prospects in multifunctional modulated devices.