Uniform, Fully Connected, High‐quality Monocrystalline Freestanding Perovskite Oxide Films Fabricated from Recyclable Substrates

Releasing epitaxial perovskite oxide films from their native oxide substrates produces high quality, 2D-material-like monocrystalline freestanding oxide membranes, as potential key components for the next-generation electronic devices. Two major obstacles still limit their practical applications: macroscopic material defects (mainly cracks) that lowers uniformity and yield, and the high cost of the consumed oxide substrates. Here, a two-step film transfer method and a substrate recycling method enable repetitive fabrication of millimeter-scale, fully-connected freestanding oxide films of various chemical compositions from the same substrates; arrays of capacitor and resistor devices based on these oxides transferred on silicon indicate high uniformity, low sample-to-sample variation, and satisfactory electrical connectivity. The two-step transfer suppresses crack formation by avoiding buckling-delamination-type relaxation of epitaxial strain, and the key point to achieve substrate reuse is to remove the residual Al species bonded to the substrate surfaces. The mitigation of such long-lasting issues in freestanding oxide fabrication techniques may eventually pave roads toward future industrial-grade devices, as well as enabling many research opportunities in fundamental physics.