Boron-Doped Plasma Enhanced Chemical Vapor Deposition of ZnO Thin Films

Highly conducting boron-doped ZnO thin films have been grown at low temperature by plasma enhanced chemical vapor deposition using diethyl zinc , carbon dioxide , triethylboron, and argon gas mixtures. The minimum resistivity is with an excellent optical transmission ( for the visible spectrum). The free-electron concentration, determined by Hall effect measurement, was as high as with a mobility of . For this deposition approach, the low-reactivity oxidant allows a uniform film growth over a large area, and the low-toxicity triethylboron allows a simple and convenient boron doping.