材料科学
薄膜
溅射沉积
陶瓷
溅射
锌
结晶度
兴奋剂
氧化物
腔磁控管
带隙
铝
光电子学
矿物学
冶金
纳米技术
复合材料
化学
作者
M. Suchea,S. Christoulakis,N. Katsarakis,Theofanis N. Kitsopoulos,G. Kiriakidis
标识
DOI:10.1016/j.tsf.2006.11.151
摘要
Pure and aluminum (Al) doped zinc oxide (ZnO and ZAO) thin films have been grown using direct current (dc) magnetron sputtering from pure metallic Zn and ceramic ZnO targets, as well as from Al-doped metallic ZnAl2at.% and ceramic ZnAl2at.%O targets at room temperature (RT). The effects of target composition on the film's surface topology, crystallinity, and optical transmission have been investigated for various oxygen partial pressures in the sputtering atmosphere. It has been shown that Al-doped ZnO films sputtered from either metallic or ceramic targets exhibit different surface morphology than the undoped ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (002). More significantly, Al-doping leads to a larger increase of the optical transmission and energy gap (Eg) of the metallic than of the ceramic target prepared films.
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