Semiconducting Sn3O4 nanobelts: Growth and electronic structure

The study of structures based on nonstoichiometric SnO2−x compounds, besides experimentally observed, is a challenging task taking into account their instabilities. In this paper, we report on single crystal Sn3O4 nanobelts, which were successfully grown by a carbothermal evaporation process of SnO2 powder in association with the well known vapor-solid mechanism. By combining the structural data and transport properties, the samples were investigated. The results showed a triclinic semiconductor structure with a fundamental gap of 2.9 eV. The semiconductor behavior was confirmed by the electron transport data, which pointed to the variable range hopping process as the main conduction mechanism, thus giving consistent support to the mechanisms underlying the observed semiconducting character.