锑
钛酸锶
材料科学
电子
亮度
表面粗糙度
表面光洁度
自由电子模型
光电子学
分析化学(期刊)
光学
激光器
化学
电介质
物理
色谱法
复合材料
量子力学
作者
Pallavi Saha,Oksana Chubenko,Gevork Gevorkyan,Kachwala, Alimohammed,Knill, Christopher J.,Sarabia-Cardenas, Carlos,Eric Montgomery,Shashi Poddar,Joshua B. Paul,Hennig, Richard G.,Padmore, Howard A.,Siddharth Karkare
摘要
The performance of x-ray free electron lasers and ultrafast electron diffraction experiments is largely dependent on the brightness of electron sources from photoinjectors. The maximum brightness from photoinjectors at a particular accelerating gradient is limited by the mean transverse energy (MTE) of electrons emitted from photocathodes. For high quantum efficiency (QE) cathodes like alkali-antimonide thin films, which are essential to mitigate the effects of non-linear photoemission on MTE, the smallest possible MTE and, hence, the highest possible brightness are limited by the nanoscale surface roughness and chemical inhomogeneity. In this work, we show that high QE Cs 3 Sb films grown on lattice-matched strontium titanate (STO) substrates have a factor of 4 smoother, chemically uniform surfaces compared to those traditionally grown on disordered Si surfaces. We perform simulations to calculate roughness induced MTE based on measured topographical and surface-potential variations on the Cs 3 Sb films grown on STO and show that these variations are small enough to have no consequential impact on the MTE and, hence, the brightness.
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