Heavy-ion irradiation study in SiNT FET inverter chain using 3D-TCAD simulation

In this work, the pulse width response due to the heavy ion irradiation in Silicon Nanotube FET (SiNT FET) inverter chains is investigated using 3D TCAD numerical simulations. Mixed mode device simulations are used to carry out the work. We consider both junction based SiNT inverter chain and junctionless SiNT inverter chain for single event transient (SET) study. The radiation strike generates a pulse and this pulse propagates through the chain. The voltage transient width due to this pulse propagation is observed at various nodes of the chain. Two types of inverter chains are studied, (i) cascaded type and (ii) parallel type. Simulation results show that the voltage transient width of parallel type chain increases with the number of inverters because of the increasing node capacitance and the junctionless SiNT inverter chains has more transient width than junction-device based SiNT inverter chains due to the heavily doped channel.