带隙基准
电阻器
电气工程
电源抑制比
修边
CMOS芯片
电压
泄漏(经济)
电子线路
灵敏度(控制系统)
电压基准
大气温度范围
低功耗电子学
功率(物理)
材料科学
工程类
光电子学
功率消耗
电子工程
物理
开关电源
宏观经济学
气象学
经济
机械工程
量子力学
跌落电压
作者
Arnab Dey,B. Subramaniam,Amin Ahsan Ali,Bhartipudi Sahishnavi,Abhishek Pullela,Zia Abbas
标识
DOI:10.1109/iscas46773.2023.10182117
摘要
The paper presents a novel nW range gate-leakage-based Sub-Bandgap Voltage Reference (sub-BGR) for low-power and high-temperature range IoT applications. It generates a reference voltage of 336mV without incorporating any resistors and operating for a high-temperature range of −40°C to 150°C and a supply range of 0.7V-4V. In the above temperature and supply ranges, the proposed circuit's power consumption only goes up by 30x and 1.025x times, respectively. Designed in a 65nm CMOS process, the proposed architecture achieves an accuracy of 94ppm/°C. It achieves a line sensitivity of 0.0066%/V for a supply range of 0.7V to 4V and a PSRR of 89dB at DC and 1V supply. The proposed circuit shows $\mathrm{a}\pm 3\sigma$ -inaccuracy of 4.295% without additional trimming circuits. It occupies only 0.0851mm2 area while consuming only 2.3nW at 27°C and 21.74nW at 150°C for a 0.7V supply.
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