Few-Layer MoS2 on a SiO2/Si Wafer through Sulfurization Chemical Vapor Deposition with a Vaporization-Shadowing Effect

This study aimed to synthesize few-layer MoS2 on SiO2/Si using sulfurization chemical vapor deposition toward beyond-5G and 6G communication. Fabric-like MoO3(s) was directly placed onto a SiO2/Si substrate to lower the oxygen potential, which is achieved through a shadowing effect on vaporization. Successful results were achieved, yielding MoS2 thin films with a coverage of more than 74% and a crystal size in the range of 50 to 600 μm. Two distinct pathways for MoS2(s) formation from MoO3(s) via MoO2(s) and MoS3(s) were also uncovered. The shadowing effect of MoO3(s) vaporization facilitated the two-dimensional growth of MoS2 by mitigating oxygen partial pressure. Therefore, sulfurization chemical vapor deposition shows great application potential in synthesizing high-quality MoS2 thin films with substantial crystal size and coverage, making them suitable for next-generation communication devices.