Berry连接和曲率
电场
凝聚态物理
Valleytronics公司
堆积
霍尔效应
异质结
自旋电子学
极化密度
极化(电化学)
物理
磁场
材料科学
铁磁性
核磁共振
化学
几何相位
磁化
量子力学
物理化学
作者
Brahim Marfoua,Jisang Hong
标识
DOI:10.1038/s42005-022-01044-5
摘要
Abstract Anomalous Hall conductivity (AHC) and valley polarization are attracting tremendous interest in spintronics and valleytronics technologies. Here, we investigate the possibility of the electric field induced switching of the AHC and magnetic proximity effect induced valley polarization in the two-dimensional (2D) WSe 2 /1T-VSe 2 heterostructure. Due to the small total energy difference, two stackings could happen (C-I and C-II). The WSe 2 layer has a valley polarization of -19 meV in the C-II stacking, and it is further increased up to -28 meV under electric fields. Also, we obtain an AHC of 75 (80) S/cm in the C-I (II) stacking. We find a sign change from positive AHC to negative value under the electric field in hole doping of the C-II stacking. We attribute this reversal of the AHC to the electric field dependent Berry curvature variation. Our finding suggests that the electric field induced AHC switching can be possible in the 2D heterostructure.
科研通智能强力驱动
Strongly Powered by AbleSci AI