Reproducible High-Performance Deep-UV Photovoltaic Photodetectors Based on Solution-Processed Ga2O3 Films

In this work, a modified solution technique for synthesizing Ga ₂ O ₃ films is presented, which aims at fabricate high performance deep-ultraviolet (DUV) photovoltaic photodetectors (PDs). Through a selection of low boiling point organic solvent and high temperature heat treatment at 800 °C, the growth process of the films is optimized, with the single-crystal-oriented Ga ₂ O ₃ films synthesized on GaN substrate. A Pt/Ga ₂ O ₃ /GaN photodetector based on the film is fabricated, which exhibits a high photoresponsivity of 11.05 mA/W and a short decay time less than 48 ms under DUV irradiation and 0 V bias. Furthermore, tests on multiple devices fabricated by the same method at 0 V bias show a smallest ratio of 9.29% referring to the standard deviation of photocurrent to the average of the photocurrent (the ratio is defined as the coefficient of variation). It indicates that the improved solution technology for synthesizing Ga ₂ O ₃ films for the DUV photovoltaic PDs is reliable and reproducible. This research can serve as a reference for fabricating DUV photovoltaic PDs with high-performance based on solution-processed Ga ₂ O ₃ films.