磷化铟
材料科学
光电探测器
光电二极管
数码产品
光电子学
制作
纳米技术
带隙
磷化物
限制
砷化镓
电气工程
工程类
医学
镍
替代医学
病理
冶金
机械工程
作者
Linqing Yue,Yanlei Shi,Niefeng Sun,Sheng Qiang,Jing‐Kai Qin,Liang Zhen,Cheng‐Yan Xu
标识
DOI:10.1002/adsr.202200101
摘要
Abstract The suitable direct bandgap, high carrier mobility, biologically nontoxicity, and size‐dependent physical properties of low‐dimensional indium phosphide InP (0D, 1D, and 2D) have attracted great interest from scientists. The appealing optical and electronic properties make them promising for the fabrication of state‐of‐the‐art nanoscale electronic and optoelectronic devices including photodiode, photodetector, and solar cells. This Review focuses on the recent development of low‐dimensional InP materials. The synthesis methods and growth mechanisms of high quality low‐dimensional InP are comprehensively recapped. The multifunctional applications in electronic and optoelectronic devices of low‐dimensional InP are discussed, and typical strategies to resolve the main challenges limiting the performance of low‐dimensional InP‐based application are then reviewed. Finally, a brief perspective on the challenges and opportunities of low‐dimensional InP in synthesis, electronics, and optoelectronics applications is also provided.
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