退火(玻璃)
单斜晶系
辐照
材料科学
衍射
离子
氧化物
氧化镓
格子(音乐)
结晶学
晶体结构
化学
冶金
光学
物理
核物理学
有机化学
声学
作者
Alexander Azarov,Vishnukanthan Venkatachalapathy,In‐Hwan Lee,Andrej Kuznetsov
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2023-01-27
卷期号:41 (2)
被引量:8
摘要
Gallium oxide (Ga2O3) exhibits complex behavior under ion irradiation since ion-induced disorder affects not only the functional properties but can provoke polymorphic transformations in Ga2O3. A conventional way used to minimize the lattice disorder is by doing postirradiation anneals. An alternative approach is to prevent the disorder accumulation from the beginning, by doing implants at elevated temperatures, so that a significant fraction of the disorder dynamically anneals out in radiation-assisted processes. Here, we use these two approaches for the minimization of radiation disorder in monoclinic β-Ga2O3 implanted to a dose below the threshold required for the polymorphic transformations. The results obtained by a combination of channeling and x-ray diffraction techniques revealed that implants at 300 °C effectively suppress the defect formation in β-Ga2O3. On the other hand, in order to reach similar crystalline quality in the samples implanted at room temperature, postirradiation anneals in excess of 900 °C are necessary.
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