Bias‐Managed Photodetection Within Drain Interconnected Semi‐Gate Diode

Abstract Image processing has become a quintessential data‐intensive computational task, and leveraging sensors with real‐time image processing has been focused for the development of photodetectors. However, managing responsivity normally needs an additional gate voltage, which seriously limits the application in the resource‐constrained edge computing. Here, a bias‐dependent photodiode (BD‐PD) with a semi‐gate interconnecting drain based on a 2D MoS 2 /CIPS heterojunction is proposed, exhibiting the ability to autonomously manage photo‐electrical characteristics without any additional gate voltage. Density functional theory validates that the formation of a type‐I band alignment in MoS 2 channel is bias‐dependent due to the bias synchronizing the semi‐gate, inducing an anomalous bias‐depended current that the dark current is reduced while photocurrent is increased as the bias increases. The high photodetection performances are exhibited including an ultra‐high photo‐to‐dark current ratio over 10 6 , a detectivity of 8×10 14 Jones, and a responsivity of 3454 A W −1 at a bias of 3 V, respectively. Moreover, it is demonstrated that the bias‐dependence of the BD‐PD can obviously improve image preprocessing and optical communication. This work provides a promising platform for the application of neuromorphic optoelectronics.