金属有机气相外延
材料科学
制作
光电子学
兴奋剂
泄漏(经济)
氮气
宽禁带半导体
图层(电子)
化学气相沉积
纳米技术
化学
外延
医学
替代医学
有机化学
病理
经济
宏观经济学
作者
Xiaorui Xu,Desen Chen,Yaoping Lu,Titao Li,Xueli Han,Duanyang Chen,Hongji Qi,Dan Yang,Min Zhu,Haizhong Zhang,Xiaoqiang Lu
摘要
In this Letter, a high-quality and high-resistivity nitrogen (N)-doped Ga2O3 current blocking layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial technology. By using nitrous oxide (N2O) as oxygen source for Ga2O3 growth and N source for doping and controlling the growth temperature, the grown CBL can effectively achieve high (∼1019 cm−3) or low (∼1017 cm−3) N doping concentrations, as well as high crystal quality. Furthermore, the electrical properties of the developed CBL are verified at the device level, which shows that the device using the CBL can withstand bidirectional voltages exceeding 3.5 kV with very low leakage (≤1 × 10−4 A/cm2). This work can pave the way for the realization of high-voltage and low-leakage Ga2O3 vertical devices, especially metal-oxide-semiconductor field effect transistors.
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