Low temperature processing of hole transport layer-free CsPbI2Br solar cells assisted by SAM co-deposition

The development of inverted all-inorganic perovskite solar cells (PSCs) is limited by the high processing temperature and poor film coverage of self-assembled molecule (SAM) hole transport layer (HTL). In this work, the hot-air-assisted annealing method was utilized to prepare CsPbI2Br films at low temperature in an ambient environment. The SAM called 2–(3,6-dimethoxycarbazol-9-yl) ethyl phosphonic acid (MeO-2PACz) is added into the CsPbI2Br precursor to spontaneously form MeO-2PACz dipole layer and perovskite light absorber. The MeO-2PACz with abundant phosphate groups modulated the uncoordinated lead at the perovskite's grain boundaries via forming –P–O–Pb and –P=O–Pb bonds, which improves the crystallinity and reduces trap density of perovskite film. Furthermore, the spontaneously formed MeO-2PACz dipole layer on the ITO substrate during the perovskite film processing enhanced hole transport efficiency and reduced non-radiative recombination loss at the ITO/CsPbI2Br interface. As a result, the p-i-n HTL-free inorganic CsPbI2Br PSCs with MeO-2PACz additive achieved a power conversion efficiency of 12.92%, which is significantly higher than the reference PSCs (6.55%). This work provides an easy and efficient way to prepare efficient HTL-free all-inorganic PSCs at low temperature in an ambient environment with MeO-2PACz SAM additive.