材料科学
微电子
薄膜
氮化物
图层(电子)
纳米技术
溅射
纤锌矿晶体结构
沉积(地质)
光电子学
铝
工程物理
冶金
工程类
锌
古生物学
生物
沉积物
作者
Cícero L. A. Cunha,Tales Cleber Pimenta,Mariana Amorim Fraga
出处
期刊:IntechOpen eBooks
[IntechOpen]
日期:2022-08-12
被引量:2
标识
DOI:10.5772/intechopen.106288
摘要
Aluminum nitride (AlN) thin films have aroused the interest of researchers due to their unique physicochemical properties. However, further studies on these semiconductor materials are still necessary to establish the manufacturing of high-performance devices for applications in various areas, such as telecommunications, microelectronics, and biomedicine. This chapter introduces AlN thin film technology that has made a wide range of applications possible. First, the main physicochemical properties of AlN, its wurtzite crystalline structure, and the incorporation of oxygen during the thin film deposition process are presented. Furthermore, the growth of AlN films by different techniques and their applications as a buffer layer and sensing layer are summarized. Special attention was given to the sputtering deposition process and the use of sputtered AlN films in SAW sensors.
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