磁电阻
凝聚态物理
自旋(空气动力学)
材料科学
物理
量子力学
磁场
热力学
作者
J. A. Mendoza-Rodarte,Katarzyna Gas,Manuel Herrera,D. Hommel,M. Sawicki,Marcos H. D. Guimarães
出处
期刊:Cornell University - arXiv
日期:2024-05-14
被引量:1
标识
DOI:10.48550/arxiv.2405.08519
摘要
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of developing advanced spintronic devices which are fully compatible with the current industrial procedures. Despite this interest, there remains a need to investigate the spintronic parameters that characterize interfaces within these systems. Here, we perform spin Hall magnetoresistance (SMR) measurements to evaluate the spin transfer at a Pt/(Ga,Mn)N interface. We determine the transparency of the interface through the estimation of the real part of the spin mixing conductance finding $G_r = 2.6\times 10^{14} \, \Omega^{-1} m^{-2}$, comparable to state-of-the-art yttrium iron garnet (YIG)/Pt interfaces. Moreover, the magnetic ordering probed by SMR above the (Ga,Mn)N Curie temperature TC provides a broader temperature range for the efficient generation and detection of spin currents, relaxing the conditions for this material to be applied in new spintronic devices.
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