泄漏(经济)
还原(数学)
材料科学
电流(流体)
工程物理
电气工程
领域(数学)
核工程
光电子学
电子工程
工程类
几何学
数学
宏观经济学
经济
纯数学
作者
Hans‐Joachim Schulze,S. Voß,Holger Huesken,F.‐J. Niedernostheide
标识
DOI:10.1109/ispsd.2011.5890805
摘要
In this paper we propose a new method to reduce the temperature dependence of the leakage current of IGBTs by reducing the temperature dependence of the anode-side current gain α pnp . The temperature dependence of α pnp can be reduced by using field-stop zones that contain doping atoms with deep levels in the band gap of silicon. We demonstrate how the temperature dependence of the leakage current is influenced when using deep-level donors instead of shallow-level donors in the field-stop zone.
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