Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory

Abstract Conductive‐bridging random access memory (CBRAM), dominated by conductive filament (CF) formation/rupture, has received much attention due to its simple structure and outstanding performances for nonvolatile memory, neuromorphic computing, digital logic, and analog circuit. However, the negative‐SET behavior can degrade device reliability and parameter uniformity. And large RESET current increases power consumption for memory applications. By inserting 2D material, molybdenum disulfide (MoS 2 ), for interface engineering with the device configuration of Ag/ZrO 2 /MoS 2 /Pt, the negative‐SET behavior is eliminated, and the RESET current is reduced simultaneously. With the ion barrier property of MoS 2 , the CF can probably not penetrate the MoS 2 layer, thus eliminating the negative‐SET behavior. And with the low thermal conductivity of MoS 2 , the internal temperature of the device would be relatively high at RESET, accelerating probably redox reactions. As a result, the RESET current is reduced by an order of magnitude. This interface engineering opens up a way in improving the resistive switching performances of CBRAM, and can be of great benefit to the potential applications of MoS 2 in next‐generation data storage.