Development of high reflective phase shift type absorber for future generation EUV mask blank (Conference Presentation)

Toward logic 3nm node and beyond, alternative absorber material is required to reduce mask 3D effect. One of the promising candidates is attenuated phase shirt type absorber which is effective for specific pattern shape such as contact hole. We developed novel high reflective phase shift type absorber. In this paper, we will report the blank and mask properties for this high reflective phase shift type absorber material.