鳍
材料科学
植入
光电子学
复合材料
医学
外科
作者
Yaotong Wu,C.H. Tsai,T. Miyashita,P.-N. Chen,B. C. Hsu,Po-Yi Wu,Hao-Wen Hsu,Chung-Shi Chiang,H.-H. Liu,H.-L. Yang,K. C. Kwong,Jui-Ping Chiang,C.-W. Lee,Ya-Yun Lin,Chung-Ting Lu,C.Y. Lin,S.Y. Wu
标识
DOI:10.1109/vlsi-tsa.2016.7480517
摘要
A comprehensive analysis of fin profile effect on bulk FinFET device characteristics is described in this paper. Optimal fin profile and anti-punch-through (APT) implant profile are important to DC performance and multiple-Vt offering capability, which are essential for system-on-chip (SoC) applications. This study provides practical device design guidelines for bulk FinFET technology.
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