材料科学
光放大器
光电子学
半导体
激光器
放大器
异质结
活动层
光功率
饱和(图论)
量子阱
半导体激光器理论
光学
图层(电子)
物理
纳米技术
组合数学
薄膜晶体管
CMOS芯片
数学
作者
A A Lobintsov,M V Shramenko,S D Yakubovich
标识
DOI:10.1070/qe2008v038n07abeh013824
摘要
Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively.
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