成核
缓冲器(光纤)
分子束外延
材料科学
外延
位错
光电子学
晶体生长
化学物理
格子(音乐)
结晶学
凝聚态物理
纳米技术
化学
复合材料
图层(电子)
电信
物理
有机化学
计算机科学
声学
作者
Yefan Chen,Soon–Ku Hong,Hang-Ju Ko,V. Kirshner,H. Wenisch,Takafumi Yao,Katsuhiko Inaba,Yasutomo Segawa
摘要
We report on an experimental study of buffer mechanism in plasma-assisted molecular-beam epitaxy of ZnO on Al2O3(0001) with a MgO buffer. It lowers the surface energy and provides nucleation cores. As a result, lateral epitaxial growth of ZnO becomes favorable from the initial growth stage. The MgO buffer also affects the generation of dislocations in such a way that it reduces their density by introducing dislocation interactions. This study suggests that by employing an appropriate buffer to modify the initial nucleation environment, high quality heteroepitaxy is achievable even with large mismatch.
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