Diffusion Coefficient of Interstitial Iron in Silicon

The in-depth profiles of iron in silicon diffused with iron at 800, 900, 1000 and 1070°C were investigated by DLTS measurements. The diffusion coefficient of interstitial iron in silicon was represented by the expression D Fe =9.5×10 -4 exp (-0.65/ k T ) cm 2 s -1 in the temperature range of 800–1070°C.