光电子学
材料科学
介电谱
电容
偏压
二极管
硅
太阳能电池
电阻抗
反向偏压
耗尽区
载流子寿命
光谱学
接受者
电压
化学
半导体
电极
物理
凝聚态物理
量子力学
物理化学
电化学
作者
Iván Mora‐Seró,Germà Garcia‐Belmonte,Pablo P. Boix,Miguel Á. Vázquez,Juan Bisquert
摘要
Highly efficient silicon solar cells have been characterised by impedance spectroscopy and current–potential characteristic in the dark and with different illumination intensities. For each illumination the impedance behaviour has been analysed at different applied bias potentials, in the forward and reverse region, comparing the results with the current–potential characteristic. Different cell parameters, as series and parallel resistances, capacitance, diode factor, minority carrier lifetime, acceptor impurities density and depletion layer charge density have been obtained as a function of bias voltage for different light illumination intensities. The effect of light-generated carriers and applied bias in the behaviour of the solar cell under illumination is discussed.
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