材料科学
兴奋剂
残余应力
耐久性
微观结构
弯曲
图层(电子)
光电子学
太阳能电池
多孔性
压力(语言学)
复合材料
语言学
哲学
作者
Luanhong Sun,Yuhao Sun,Lingyun Hao,Qing Lin,Wei Wang,Yijie Zhao,Hangmin Guan,Yuanfeng Ye
标识
DOI:10.1016/j.matlet.2023.134974
摘要
Ga-doped CZTSSe is achieved by evaporating Ga layer in precursor combined with subsequent selenization to balance the efficiency and bending durability of flexible CZTSSe solar cells in this paper. Ga doping can simultaneously alleviate the residual stress and reinforce the microstructure of CZTSSe, retaining the original lattice structure of CZTSSe and suppressing Sn-related deep level defects. The gratifying residual stress reduction from -5.31 GPa to -3.82 GPa with decreased porosity from 6.24% to 3.24% of CZTSSe thin film spontaneously promotes the device performance after evaporating the 20 nm Ga layer. A desirable efficiency enhancement from 2.61% to 5.04% with preferable bending durability of flexible device is achieved, which strategy provides substantial assistance for the potential application of flexible solar cells.
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