衰减器(电子)
插入损耗
回波损耗
材料科学
单片微波集成电路
衰减
光衰减器
光电子学
晶体管
电气工程
物理
光学
工程类
CMOS芯片
放大器
多模光纤
电压
光纤
天线(收音机)
作者
Li Zhao,Wen-Feng Liang,Xin Xu,Xin Jiang,Jianyi Zhou
摘要
This paper presents a 40–50 GHz low insertion loss 6-bit digital step attenuators. The attenuator has a maximum attenuation range of 31.5 dB with 0.5 dB steps (64 states). It is the first full 6-bit digital attenuator reported over the frequency range of 40–50 GHz to the best of the authors' knowledge. An accurate field effect transistor's (FET's) switch model is developed, which is crucial for the design of attenuator at such high frequency. To reduce the insertion loss, the series transistors of switched T attenuator are removed in the least significant bits (LSBs). The attenuator is fabricated using a 0.15 µm GaAs pHEMT process. The measured insertion loss is 6.5 dB at 40 GHz and 7 dB at 44 GHz respectively. This attenuator exhibits a root-mean-square (RMS) amplitude error of 0.5 dB at 46 GHz, and with the input and output return loss below −10 dB at 40–50 GHz. The core chip size, excluding pads, is 1.8 × 1.05 mm2.
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