量子阱
光致发光
材料科学
旋转
拉希巴效应
斯塔克效应
异质结
自旋电子学
凝聚态物理
锗
激发
圆极化
哈密顿量(控制论)
极化(电化学)
光电子学
量子限制斯塔克效应
人口
红移
半导体
量子点
物理
磁场
电场
光学
铁磁性
硅
量子力学
化学
激光器
数学
物理化学
银河系
社会学
数学优化
人口学
作者
Simone Rossi,Enrico Talamas Simola,Marta Raimondo,M. Acciarri,Jacopo Pedrini,A. Balocchi,X. Marie,Giovanni Isella,Fabio Pezzoli
标识
DOI:10.1002/adom.202201082
摘要
The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark effect, a threefold enhancement of the circular polarization degree of the direct transition is obtained by increasing the pump power over a 2kW/cm$^2$ range. This marked variation reflects an efficient modulation of the spin population and is further supported by dedicated investigations of the indirect gap transition. This study demonstrates a viable strategy to engineer the spin-orbit Hamiltonian through contactless optical excitation and opens the way towards the electro-optical manipulation of spins in quantum devices based on group-IV heterostructures.
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