Modification of unconventional Hall effect with doping at the nonmagnetic site in a two-dimensional van der Waals ferromagnet

Two-dimensional (2D) van der Waals (vdW) magnets have garnered considerable attention owing to the existence of magnetic order down to atomic dimensions, flexibility towards interface engineering and unconventional magnetoresistive properties, offering an attractive platform to explore novel phenomena and functionalities, prospective for spintronic or quantum information devices. Among the promising candidates, vdW ferromagnet (FM) ${\mathrm{Fe}}_{3}{\mathrm{GeTe}}_{2}$ shows an unusual magnetotransport behavior, tunable by doping at the magnetic (Fe) site, and tentatively arising from complicated underlying spin texture configurations. In this work, we explore an alternative route towards manipulation of magnetotransport properties without directly affecting the magnetic site i.e., by doping at the nonmagnetic (Ge) site of ${\mathrm{Fe}}_{3}(\mathrm{Ge},\mathrm{As}){\mathrm{Te}}_{2}$. Interestingly, doping at the non-magnetic (Ge) site results in an unconventional Hall effect whose strength was considerably modified by increasing As concentration, tentatively attributed to underlying emergent electromagnetic behavior, demonstrating an alternate direction towards tailoring of underlying interactions without perturbing the magnetic (Fe) site in 2D vdW magnetic materials.