腐蚀
铜
铜水管的冲蚀腐蚀
材料科学
极化(电化学)
半导体
扫描电子显微镜
冶金
无机化学
化学
复合材料
物理化学
光电子学
作者
Hengte Li,Zhuoyuan Chen,Xingchen Liu,Jianjun Yang,Mingxian Sun,Rong‐Chang Zeng
出处
期刊:Journal of The Electrochemical Society
[The Electrochemical Society]
日期:2018-01-01
卷期号:165 (10): C608-C617
被引量:23
摘要
The mechanism of the photoelectrochemical (PEC) effect of the corrosion products with semiconductor properties on the initial NaCl-induced atmospheric corrosion of pure copper was studied in this work. The effect of UV illumination on the initial NaCl-induced atmospheric corrosion of pure copper was quantitatively studied using microgravimetry. Fourier transform infrared spectroscopy, X-ray diffraction and scanning electron microscopy were used to identify the corrosion products and corrosion morphologies. Mott-Schottky methods were used to characterize the semiconductor type of the corrosion products. The photoinduced variations of the open circuit potentials, current densities, i-V curves and the polarization curves were used to analyze the PEC effect of the corrosion products with semiconductor properties on the corrosion of copper. UV illumination significantly increased the NaCl-induced atmospheric corrosion rate of copper. The photoinduced electrons did not transfer to the copper substrate, on the contrary, the photogenerated holes captured the electrons from the copper substrate, thus accelerating the atmospheric corrosion process of pure copper. The detailed influencing mechanism of the PEC effect on the NaCl-induced atmospheric corrosion of copper was suggested in this paper.
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