Quantitative Analysis of Trace Elements in Silicon Carbide Device by Laser Ablation Inductively Coupled Plasma Mass Spectrometry

Trace elements in silicon carbide SiC device were determined by laser ablation inductively coupled plasma mass spectrometry( LA-ICP-MS) using National Institute of Standards and Technology standard reference materials( NIST SRM) glasses as calibration standards with29Si as internal standard,and relative sensitivity factor( RSF) to calculate the matrix effect. Stable signal intensity and high sensitivity were obtained when the laser spot size was 150 μm and the flow rate of Ar and He was 0. 7 L / min. The correlation coefficients of trace elements have achieved 0.9981-0.9999 after internal standard correction. The reliability of the proposed method was confirmed by determining the content of B,Ti,Cr,Mn,Fe,Ni,and Cu in SiC standard reference material( BAM-S003). The method was applied for analyzing the SiC device,and the result obtained by the method agreements with those by glow discharge mass spectrometry( GD-MS). The detection limits ranged from 0.004 mg / kg to 0.08 mg / kg for B,Ti,Cr,Mn,Fe,Ni,Cu,Sr and La. Relative standard deviation measured at trace element concentrations was less than 5%.