Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations

Abstract Using a SiN x insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in p–i–n InGaN/GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiN x insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiN x insertion layer. However, the quantum confined stark effect was almost negligible in both the samples. Electrical properties measurement showed reduced saturation current and increased shunt resistance in the sample with SiN x insertion layer due to the reduced dislocation density. By comparing these results and using a numerical model, the influence of the dislocation density on the different photovoltaic properties such as open-circuit voltage and fill factor has been confirmed.