Electrospinning-Driven InHfOx Nanofiber Channel Field-Effect Transistors and Humidity Stability Exploration

High-performance field-effect transistors (FETs) based on electrospun Hf-doped In2O3 nanofibers as channel layers have been constructed in this article. InHfOx nanofibers were studied using scanning electron microscopy (SEM), X-ray diffraction (XRD), and electrical measurements to investigate their crystallinity, surface morphology, and electrical properties. Enhanced electrical performance has been achieved for FETs with an optimized Hf doping concentration of 3%, including high field-effect mobility ( $\mu _{{\mathrm {FE}}}$ ) of 1.93 cm2V−1s−1, a large ${I}_{{\mathrm {on}}}/{I}_{{\mathrm {off}}}$ of $1.39\times 10$ 7, a low ${V}_{{\mathrm {TH}}}$ of 0.59 V, and a small interfacial trap state ( ${D}_{{\mathrm {it}}}$ ) of $7.29\times10$ 11 cm−3. Humidity stability explorations have indicated that InHf $_{3\%}\text{O}$ -based FET device performance is the most stable of all devices, confirmed by low-frequency noise (LFN) measurements and positive bias stress tests (PBSTs). The main reason can be attributed to the Hf-doping-induced hydrophobicity of InHfOx nanofibers. To demonstrate the capability of the device in more complex logic circuits, a resistor-loaded inverter based on InHf $_{3\%}\text{O}$ /SiO2 FET exhibits excellent full swing characteristics with a voltage gain of 3. Our work has indicated the great potential prospects of electrospinning-derived nanofiber-based FETs in future oxide-based electronics.