Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films

In this article, the effect of the ZrO2 intercalation layer on the ferroelectric properties and the tunneling electroresistance (TER) effect of Hafnium–Lanthanum oxide (La:HfO2)-based ferroelectric tunnel junction (FTJ) devices were systematically investigated for the first time. Compared with the initial La:HfO2 device, an improved value of remnant polarization (2Pr) ∼16.3 μC/cm2@4 V by intercalating the ZrO2 interlayer can be observed. The underline mechanism for the enhanced ferroelectric properties of La:HfO2 thin films with the ZrO2 intercalation layer was supported by the first-principal calculations. Furthermore, the FTJ performance was evaluated. The TER ratio of La:HfO2-based FTJs showed an increase from 1.5 to 15.1@6 V, 1000 ns@by ZrO2 interlayer incorporating. Finally, the mechanism behind the enhancement of ferroelectric polarization characteristics and the FTJ performance of La:HfO2 by introducing ZrO2 interlayers were unveil. These findings provide valuable guidance for optimizing the ferroelectric properties and FTJ performance of HfO2-based thin films and promoting future memory applications.