材料科学
光电子学
谐振器
光子学
波导管
波长
光子集成电路
可见光谱
Q系数
氮化硅
光学
硅光子学
联轴节(管道)
硅
物理
冶金
作者
Jack A. Smith,Henry Francis,Gabrielė Navickaitė,Michael J. Strain
摘要
We present a high performance silicon nitride photonic integrated circuit platform operating at visible wavelengths, accessible through the commercial foundry, LIGENTEC. Propagation losses were measured across the visible spectrum from 450 nm to 850 nm. For wavelengths above 630 nm, losses were <1 dB / cm in TE and <0.5 dB / cm in TM. Additionally, sets of single mode waveguide-coupled ring resonators across three separate chips were tested and analysed. A peak intrinsic Q factor of 3.69 × 10 6 was measured for a single resonance at ∼635.3 nm, with an average value of 2.28 × 10 6 recorded over 10 peaks in a 3 nm tuning range. Analyses of the loss and coupling, as functions of bus-ring coupling gap and waveguide width, are also presented. High confinement, low loss devices realised on the chip-scale in a wide-bandgap material like silicon nitride are increasingly important for the next generation of integrated optical devices operating at visible wavelengths.
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