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Overview of Memristor-Based Design for Analog Applications

记忆电阻器 神经形态工程学 可扩展性 计算机科学 数码产品 电阻随机存取存储器 计算机体系结构 可靠性(半导体) 电子工程 系统工程 工程类 电气工程 功率(物理) 人工智能 人工神经网络 物理 量子力学 数据库 电压
作者
Imen Barraj,Hassen Mestiri,Mohamed Masmoudi
出处
期刊:Micromachines [MDPI AG]
卷期号:15 (4): 505-505 被引量:2
标识
DOI:10.3390/mi15040505
摘要

Memristor-based design has gained significant attention in recent years due to its potential to revolutionize various fields such as artificial intelligence, neuromorphic computing, non-volatile memory, signal processing, filtering, and radio frequency design. These emerging devices offer unique advantages such as non-volatile memory, low power consumption, and a high integration density. Their scalability and compatibility with existing fabrication processes make them an attractive option for industry adoption, paving the way for faster and more efficient architecture design. Researchers are actively exploring ways to optimize memristor technology for practical applications to harness its full potential. This includes developing novel materials and structures as well as improving the reliability and performance of memristors in various applications. This paper provides a comprehensive overview of the current advancements in memristor technology and their potential impact on the design of future electronic systems, focusing on its applications in the analog domain. By exploring the latest research and development in this field, researchers can gain valuable insights into how analog memristors can be integrated into their designs to achieve enhanced performance and efficiency. The paper delves into the fundamental principles of memristor technology, exploring its unique characteristics and advantages over traditional electronic components. It discusses the potential impact of memristors and challenges in the analog field of electronics, and highlights the progress made in their integration with existing circuitry, enabling novel functionalities and improved performance. Furthermore, it highlights ongoing research efforts to improve the performance and reliability of memristors, as well as the potential limitations and challenges that need to be addressed for widespread adoption, including variability in performance and reliability.
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