材料科学
过饱和度
薄脆饼
石墨
晶体生长
过程(计算)
基础(拓扑)
复合材料
工程物理
机械工程
光电子学
结晶学
热力学
计算机科学
数学分析
数学
工程类
操作系统
化学
物理
作者
Michael Schöler,Philipp Schuh,Johannes Steiner,Peter J. Wellmann
出处
期刊:Materials Science Forum
日期:2019-07-19
卷期号:963: 157-160
被引量:5
标识
DOI:10.4028/www.scientific.net/msf.963.157
摘要
We report on the modeling of the temperature field and supersaturation in front of the SiC crystal growth interface of a physical vapor transport growth configuration. The data are compared with experimental results, like the growth of free standing 3C-SiC wafers with a diameter of 50 mm and a thickness of 870 µm. Special emphases is put on the precise handling of the materials properties which include the temperature dependency of the heat and electrical conductivity of the graphite parts at temperatures above 2000 °C.
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