神经形态工程学
记忆电阻器
计算机科学
可靠性(半导体)
卷积神经网络
人工神经网络
深度学习
横杆开关
推论
人工智能
计算
计算机工程
集合(抽象数据类型)
计算机体系结构
电子工程
算法
工程类
物理
电信
量子力学
功率(物理)
程序设计语言
作者
Meng-Yao Lin,Hsiang-Yun Cheng,Wei‐Ting Lin,Tung‐Han Yang,I‐Hsiang Tseng,Chia-Lin Yang,Hanwen Hu,Hung-Sheng Chang,Hsiang-Pang Li,Meng‐Fan Chang
标识
DOI:10.1145/3240765.3240800
摘要
Memristor-based deep learning accelerators provide a promising solution to improve the energy efficiency of neuromorphic computing systems. However, the electrical properties and crossbar structure of memristors make these accelerators error-prone. To enable reliable memristor-based accelerators, a simulation platform is needed to precisely analyze the impact of non-ideal circuit and device properties on the inference accuracy. In this paper, we propose a flexible simulation framework, DL-RSIM, to tackle this challenge. DL-RSIM simulates the error rates of every sum-of-products computation in the memristor-based accelerator and injects the errors in the targeted TensorFlow-based neural network model. A rich set of reliability impact factors are explored by DL-RSIM, and it can be incorporated with any deep learning neural network implemented by TensorFlow. Using three representative convolutional neural networks as case studies, we show that DL-RSIM can guide chip designers to choose a reliability-friendly design option and develop reliability optimization techniques.
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