X射线光电子能谱
兴奋剂
分析化学(期刊)
材料科学
薄膜
纳米结构
表征(材料科学)
降水
核化学
化学
纳米技术
化学工程
色谱法
光电子学
物理
气象学
工程类
作者
Vinayak Adimule,R. G. Revaiah,Santosh Nandi,Adarsha Haramballi Jagadeesha
标识
DOI:10.1002/elan.202060329
摘要
Abstract In the present work, Cr doped tellurium dioxide nanostructures (CTO NS)(1 wt %, 6 wt %, 8 wt % and 12 wt %) synthesized by co precipitation method and characterized by CV, UV‐Visible, SEM, XRD, XPS spectroscopic analysis. Electron beam deposited thin film of CTO NS having 12 wt % of Cr exhibited EGFET‐pH sensitivity of 62.03 mV/pH at 250 °C in buffer solutions of pH 6–12, linearity 0.9345, drift rate of 1.12 mV/h and deviation of 0.01145 as compared with 1 wt %, 6 wt % and 8 wt % of CTO NS.
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