极紫外光刻
平版印刷术
薄脆饼
材料科学
光刻
光学
瞬态(计算机编程)
极端紫外线
变形(气象学)
热的
光电子学
吸收(声学)
体积热力学
计量学
下一代光刻
抵抗
计算机科学
纳米技术
物理
复合材料
电子束光刻
激光器
操作系统
量子力学
气象学
图层(电子)
作者
Ke Liu,Yanqiu Li,Fuchang Zhang,Mingzhe Fan
摘要
For extreme ultraviolet lithography (EUVL) targeting 45 nm technology generation and beyond, thermal absorption is the main source of multilayer-coated mirror structural deformation, which will finally cause degradation of lithographic performance. It becomes necessary to consider thermal absorption issue in the design phase of volume production tool. Utilizing several commercial and in-house software packages, we have performed a complete transient thermo-mechanical analysis of such effects and its impact on optical performance for volume production of EUVL. This article presents the simulation results based on wafer throughput model of 100 300 mm wafers per hour for the 32 nm technology generation.
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