磁阻随机存取存储器
德拉姆
非易失性随机存取存储器
铁电RAM
计算机科学
通用存储器
与非门
半导体存储器
非易失性存储器
电阻随机存取存储器
闪存
计算机存储器
嵌入式系统
内存刷新
逻辑门
随机存取存储器
计算机硬件
电气工程
工程类
电容器
电压
算法
出处
期刊:International Conference on Simulation of Semiconductor Processes and Devices
日期:2021-09-27
被引量:22
标识
DOI:10.1109/sispad54002.2021.9592547
摘要
DRAM and NAND Flash memory demands for server, datacenter, cloud, mobile and AIOT including ML, autonomous and connected vehicles application have been increased on and on. In addition, emerging memory market such as STT-MRAM, ReRAM, PCRAM, FeRAM and 3D XPoint Memory are expected to reach ${\$}36B$ by 2030. Memory technologies have quite different stories from Logic devices which is referring to Moore’s Law. DRAM, NAND Flash and Emerging memory makers are racing of device scaling, however many of electrical and physical limits are coming into reality. We overview current memory technology, and further discuss the details, trends, and upcoming challenges.
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