原子层沉积
蚀刻(微加工)
沉积(地质)
化学气相沉积
材料科学
原子单位
干法蚀刻
物理气相沉积
可控性
图层(电子)
纳米技术
原子层外延
等离子体处理
光电子学
薄膜
等离子体
物理
量子力学
数学
生物
应用数学
古生物学
沉积物
作者
Guangjie Yuan,Ning Wang,Shirong Huang,Johan Liu
标识
DOI:10.1109/icept.2016.7583377
摘要
Atomic layer deposition (ALD) and atomic layer etching (ALE) are two important techniques in the semiconductor processing, which focus ultra-thin film deposition and etching, respectively. Both of them have the self-limiting surface behavior, and could realize the atomic-scale fidelity in the deposition and etching processes. Unlike traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD has good step coverage, atomic-scale thickness controllability, and composition uniformity at low growth temperature. Compared with traditional continuous-wave plasma etching, ALE has smooth surface, excellent depth uniformity and atomic-scale thickness controllability. In this review, their fundamental and applications have been discussed.
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