A resonant‐cavity blue–violet light‐emitting diode with conductive nanoporous distributed Bragg reflector

While III-Nitride micro-cavity light emitters are of great interest, electrically conductive and optically highly reflective distributed Bragg mirrors remain a major challenge. In this paper, we demonstrate a blue–violet resonant-cavity light-emitting diode (RC-LED) with a novel conductive nanoporous (NP)-GaN/GaN DBR as the bottom mirror. The NP-DBR is converted from an all-GaN epitaxial structure with modulated doping profile, and formed by using a conductivity-selective anodic electro-chemical etching process. The NP-GaN material has a tunable index of refraction and maintains its electrical conductivity. The benefits of such NP-DBR RC-LED include a more efficient quasi-vertical current injection scheme benefited from the conductive NP-DBR, and a manufacturable fabrication process, which makes NP-DBR a unique opportunity for the commercialization of GaN-based vertical-cavity surface emitters.