铁电性
范德瓦尔斯力
光子学
光电子学
计算
物理
材料科学
计算机科学
算法
分子
电介质
量子力学
作者
Fei Xue,Xin He,Dharmaraj Periyanagounder,Zhigang Ji,Lain‐Jong Li,Jr‐Hau He,Xixiang Zhang
标识
DOI:10.1109/ted.2021.3059976
摘要
We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In 2 Se 3 . We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW material-based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In 2 Se 3 memory devices, we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW material-based optoelectronic memories for dense device integration and next-generation computation.
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