整改
石墨烯
材料科学
肖特基二极管
光电子学
异质结
对偶(语法数字)
二极管
单层
领域(数学)
频道(广播)
纳米技术
电压
计算机科学
电气工程
电信
艺术
文学类
工程类
数学
纯数学
作者
Wonjae Kim,Changfeng Li,Ferney A. Chaves,David Jiménez,Raúl D. Rodriguez,Jannatul Susoma,Matthias A. Fenner,Harri Lipsanen,Juha Riikonen
标识
DOI:10.1002/adma.201504514
摘要
A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.
科研通智能强力驱动
Strongly Powered by AbleSci AI