P-95: Inverted Tandem Architecture of Quantum-dot Light Emitting Diodes with Solution Processed Charge Generation Layers

An inverted tandem quantum-dot light-emitting diode (QLEDs) is demonstrated using solution processed charge generation layers (CGLs) for the first time. The tandem QLEDs with the CGL, consisting of green QDs (G-QDs) for bottom and red QDs (R-QDs) for top cells, exhibited yellow emission with current efficiency of 15.9 cd/A at 1,000 cd/m2.